Light-emitting semiconductor device and method of fabrication

Details Light-emitting semiconductor device and method of fabrication Light-emitting semiconductor device and method of fabrication

2005-12-27

2005-12-27

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

C257S097000, C257S085000, C257S013000

Reexamination Certificate

active

06979844

ABSTRACT:
A low-resistance silicon baseplate (11) has formed thereon a buffer layer12in the form of an alternating lamination of AlN sublayers (12a) and GaN sublayers (12b). On this buffer layer there are formed an n-type semiconductor region (13) of gallium nitride, an active layer (14) of gallium indium nitride, and a p-type semiconductor region (15) of gallium nitride, in that order. An anode (17) is formed on the p-type semiconductor region (15), and a cathode (18) on the baseplate (11).

REFERENCES:
patent: 5831277 (1998-11-01), Razeghi
patent: 6110277 (2000-08-01), Braun
patent: 6255198 (2001-07-01), Linthicum et al.
patent: 6566677 (2003-05-01), Kano et al.

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