1978-06-06
1980-01-08
Edlow, Martin H.
357 18, 357 55, H01L 3300
Patent
active
041830393
ABSTRACT:
A light emitting semiconductor device wherein a p-n junction is defined by a ditch and wherein the ditch either extends to a low resistance layer or is away from the low resistance layer at most 1/2 of the width of the ditch is disclosed. It has the merit that the near field pattern is much more uniform than in a prior-art device.
REFERENCES:
patent: 3805376 (1974-04-01), D'asaro
patent: 3900864 (1975-08-01), Dapkus
patent: 3947840 (1976-03-01), Croford
patent: 4017881 (1977-04-01), Ono
patent: 4032944 (1977-06-01), Van Dongen
Aoki Masaaki
Ito Kazuhiro
Kurata Kazuhiro
Mori Mitshiuro
Morioka Makoto
Edlow Martin H.
Hitachi , Ltd.
LandOfFree
Light emitting semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Light emitting semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1942416