Light emitting semiconductor device

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357 18, 357 55, H01L 3300

Patent

active

041830393

ABSTRACT:
A light emitting semiconductor device wherein a p-n junction is defined by a ditch and wherein the ditch either extends to a low resistance layer or is away from the low resistance layer at most 1/2 of the width of the ditch is disclosed. It has the merit that the near field pattern is much more uniform than in a prior-art device.

REFERENCES:
patent: 3805376 (1974-04-01), D'asaro
patent: 3900864 (1975-08-01), Dapkus
patent: 3947840 (1976-03-01), Croford
patent: 4017881 (1977-04-01), Ono
patent: 4032944 (1977-06-01), Van Dongen

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