Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2007-11-02
2009-10-27
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S022000, C438S483000
Reexamination Certificate
active
07608472
ABSTRACT:
A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlXInYGa(1-X-Y))2O3where 0≦x≦1, 0≦y≦1 and 0≦x+y≦1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.
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Communication Pursuant to Article 94(3) EPC of Nov. 20, 2008.
Aoki Kazuo
Garcia Villora Encarnacion Antonia
Ichinose Noboru
Kaneko Yukio
Shimamura Kiyoshi
Koha Co., Ltd.
Pham Long
Scully , Scott, Murphy & Presser, P.C.
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