Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2011-04-19
2011-04-19
Sandvik, Benjamin P (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257SE33003, C257SE33060, C257SE33068, C438S029000
Reexamination Certificate
active
07928460
ABSTRACT:
In a laser chip1using a nitride semiconductor having a hexagonal crystal structure, the −c plane is used as a first resonator facet A, which is the side of the laser chip1through which light is emitted. On the first resonator facet A, that is, on the −c plane, a facet protection film14is formed. This ensures firm joint between the first resonator facet A and the facet protection film14and alleviates deterioration of the first resonator facet A.
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Kuniyoshi Okamoto et al., “Continuous-Wave Operation ofm-Plane InGaN Multiple Quantum Well Laser Diodes,” Japanese Journal of Applied Physics, (JJAP Express Letter) vol. 46, No. 9, 2007, pp. L187-L189.
Kamikawa Takeshi
Kawaguchi Yoshinobu
Kawakami Toshiyuki
Harness & Dickey & Pierce P.L.C.
Kuo W. Wendy
Sandvik Benjamin P
Sharp Kabushiki Kaisha
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