Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2005-10-18
2005-10-18
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S024000, C438S046000, C438S047000
Reexamination Certificate
active
06955933
ABSTRACT:
A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region includes a second semiconductor layer which is either a quantum well layer or a barrier layer. The second semiconductor layer is formed from a semiconductor alloy having a composition graded in a direction substantially perpendicular to the first surface of the first semiconductor layer. The light emitting device also includes a third semiconductor layer of a second conductivity type formed overlying the active region.
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Bour David P.
Gardner Nathan F.
Goetz Werner K.
Hasnain Ghulam
Hueschen Mark R.
Louie Wai-Sing
Lumileds Lighting U.S. LLC
Patent Law Group LLP
Pham Long
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