Light emitting diode structure and method for fabricating...

Details Light emitting diode structure and method for fabricating... Light emitting diode structure and method for fabricating...

2007-12-21

2009-10-06

Le, Thao X (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Groove formation

C257SE33006

Reexamination Certificate

active

07598105

ABSTRACT:
The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer. Next, the substrate is etched to form a plurality of concave zones and a plurality of convex zones with the chemical reaction layer overhead. Next, the chemical reaction layer is removed to form an irregular geometry of the concave zones and convex zones on the surface of the substrate. Then, a semiconductor light emitting structure is epitaxially formed on the surface of the substrate. Thereby, the present invention can achieve a light emitting diode structure having improved internal and external quantum efficiencies.

REFERENCES:
patent: 6870193 (2005-03-01), Takeya et al.
patent: 2005/0196888 (2005-09-01), Morita
patent: 2008/0230793 (2008-09-01), Yoon et al.

Affiliated with

Also associated with

Rating

Light emitting diode structure and method for fabricating... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light emitting diode structure and method for fabricating..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting diode structure and method for fabricating... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4119642