Light emitting diode structure

Details Light emitting diode structure Light emitting diode structure

2007-11-06

2007-11-06

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

C257S099000, C257S103000, C257SE33002, C257SE33006, C257SE33014

Reexamination Certificate

active

11163220

ABSTRACT:
A LED structure including an epitaxy substrate, a semiconductor layer, a first bonding pad and a second bonding pad, is provided. The epitaxy substrate has a through hole and the semiconductor layer is disposed on the epitaxy substrate. The semiconductor layer includes a first type doped semiconductor layer, a light-emitting layer and a second type doped semiconductor layer. The first type doped semiconductor layer is disposed on the epitaxy substrate, while the light-emitting layer is disposed between the first type and second type doped semiconductor layers. The first bonding pad is disposed in the through hole and electrically connected to the first type doped semiconductor layer, while the second bonding pad is disposed on the second type doped semiconductor layer.

REFERENCES:
patent: 2003/0047741 (2003-03-01), Hata et al.
patent: 2005/0194606 (2005-09-01), Oohata
patent: 2005/0247946 (2005-11-01), Shin
patent: 2005/0258436 (2005-11-01), Arai
patent: 2006/0145159 (2006-07-01), Yokoyama et al.

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