Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Packaging or treatment of packaged semiconductor
Reexamination Certificate
2007-02-06
2007-02-06
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Packaging or treatment of packaged semiconductor
C438S455000, C257SE33068
Reexamination Certificate
active
10904185
ABSTRACT:
A light emitting diode having an adhesive layer and a reflective layer and a manufacturing method thereof featured by adhering together a light emitting diode stack and a substrate having a reflective metal layer by use of a transparent adhesive layer so that the light rays directed to the reflective metal layer can be reflected therefrom to improve the brightness of the light emitting diode.
REFERENCES:
patent: 5376580 (1994-12-01), Kish et al.
patent: 5798536 (1998-08-01), Tsutsui
patent: 6180963 (2001-01-01), Arai
patent: 6287882 (2001-09-01), Chang et al.
patent: 6320206 (2001-11-01), Coman et al.
patent: 6416194 (2002-07-01), Demiryont
patent: 6597019 (2003-07-01), Inoue et al.
patent: 6682950 (2004-01-01), Yang et al.
patent: 2002/0053872 (2002-05-01), Yang et al.
patent: 2002/0080836 (2002-06-01), Hwang
patent: 2002/0105003 (2002-08-01), Yang et al.
patent: 2003/0040133 (2003-02-01), Horng et al.
patent: 2003/0087463 (2003-05-01), Horng et al.
patent: 2003/0155579 (2003-08-01), Yang
patent: 2003/0168664 (2003-09-01), Hahn et al.
patent: 2004/0124428 (2004-07-01), Lin et al.
patent: 10118447 (2002-05-01), None
patent: 52-23986 (1977-06-01), None
patent: 57-10280 (1982-01-01), None
patent: 8-330624 (1996-12-01), None
patent: 11-168236 (1999-06-01), None
patent: 2000-91628 (2000-03-01), None
patent: 2000091628 (2000-03-01), None
patent: 2000-228563 (2000-08-01), None
Chua, C.L. et al., “Dielectrically-Bonded Long Wavelength Vertical Cavity Laser on GaAs Substrates Using Strain-Compensated Multiple Quantum Wells,” IEEE Photonics Technology Letters, vol. 6, No. 12, pp. 1400-1402, Dec. 1994.
Chen-Fu Chu et al., Fabrication and Characteristics of Freestanding GaN light emitting Devices by Laser Lift-off Technique, Proceedings of Opto-Electronics and Communications Conference. Jul. 8, 2002, No. 87, Yokohama, Japan.
F. S. Shieu et al., Effect of a Ti interlayer on the bond strength and thermal stability of the Cu/benzocyclobutene-divinyl tetramethyldisiloxane Interface, J. Adhesion Sci. Technol., 1998, pp. 19-28, vol. 12, No. 1, VSP, Netherlands.
R. H. Horng et al., AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding, Applied Physics Letters, Nov. 15, 1999, pp. 3054-3056, vol. 75, No. 20, American Institute of Physics, USA.
G. Dang et al., Comparison of Dry and Wet Etch Processes for Patterning SiO2/TiO2 Distributed Bragg Reflectors for Vertical-Cavity Surface-Emitting Lasers, Journal of The Electrochemical Society, 2001, G25-G28, vol. 148(2), The Electrochemical Society, Inc., NJ, USA.
T. Margalith et al., Indiumtin oxidecontacts to gallium nitride optoelectronic devices, Applied Physics Letters, Jun. 28, 1999, pp. 3930-3932, vol. 74, No. 26, American Institute of Physics, USA.
R. H. Horng et al, “AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding.” Appl. Phys. Lett., Nov. 15, 1999, pp. 3054-3056, vol. 75, No. 20.
Hsieh Min-Hsun
Liu Wen-Huang
Tseng Tzu-Feng
Wang Jen-Shui
Yeh Ting-Wei
Dolan Jennifer M.
Epistar Corporation
Hsu Winston
Jr. Carl Whitehead
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