Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Reexamination Certificate
2011-08-09
2011-08-09
Sefer, A. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
With lattice constant mismatch
C257SE33028, C257SE33034
Reexamination Certificate
active
07994539
ABSTRACT:
The present invention relates to a light emitting diode having an AlxGa1−xN buffer layer and a method of fabricating the same, and more particularly, to a light emitting diode having an AlxGa1−xN buffer layer, wherein between a substrate and a GaN-based semiconductor layer, the AlxGa1−xN (0≦x≦1) buffer layer having the composition ratio x of Al decreasing from the substrate to the GaN-based semiconductor layer is interposed to reduce lattice mismatch between the substrate and the GaN-based semiconductor layer, and a method of fabricating the same. To this end, the present invention provides a light emitting diode comprising a substrate; a first conductive semiconductor layer positioned on the substrate; and an AlxGa1−xN (0≦x≦1) buffer layer interposed between the substrate and the first conductive semiconductor layer and having a composition ratio x of Al decreasing from the substrate to the first conductive semiconductor layer.
REFERENCES:
patent: 6534800 (2003-03-01), Ohbo et al.
patent: 2002/0017648 (2002-02-01), Kasahara et al.
patent: 2002/0020850 (2002-02-01), Shibata et al.
patent: 2002/0027236 (2002-03-01), Uenoyama et al.
patent: 2002/0074552 (2002-06-01), Weeks et al.
patent: 2003/0057434 (2003-03-01), Hata et al.
patent: 2004/0026978 (2004-02-01), Kim
patent: 2006/0180831 (2006-08-01), Nakazawa et al.
patent: 2007/0290230 (2007-12-01), Kawaguchi et al.
patent: 10142653 (2003-04-01), None
patent: 10-093140 (1998-04-01), None
patent: 2000-021297 (2000-01-01), None
patent: 2002118282 (2002-04-01), None
patent: 2003-158294 (2003-05-01), None
patent: 10-2000-0074448 (2000-12-01), None
Office Action issued Jan. 28, 2010 in co-pending U.S. Appl. No. 12/090,047.
Final Office Action dated Jun. 9, 2010 in U.S. Appl. No. 12/090,047.
Office Action issued Apr. 28, 2010 by the German Patent and Trademark Office in German Patent Application No. 11 2007 000 060.0-33.
Final Office Action dated Sep. 10, 2010 in U.S. Appl. No. 12/090,047.
Non-final Office Action of U.S. Appl. No. 12/090,047, mailed Mar. 22, 2011.
H.C. Park & Associates PLC
Parker Allen L
Sefer A.
Seoul Opto Device Co., Ltd.
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