Light emitting diode

Details Light emitting diode Light emitting diode

2005-05-03

2005-05-03

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

C257S079000, C257S613000, C257S615000, C257S612000, C257S624000, C257S626000

Reexamination Certificate

active

06888171

ABSTRACT:
A semi-conductor light emitting diode includes closely spaced n and p electrodes formed on the same side of a substrate to form an LED with a small foot-print. A semi-transparent U shaped p contact layer is formed along three sides of the top surface of the underlying window layer. The p electrode is formed on the p contact layer centered on the closed end of the U shaped layer. An n contact layer is formed on an n cladding layer and centered in the open end of the U of the p contact layer. The n electrode is formed on the n contact layer. The n and p electrodes are electrically isolated from one another by either a trench or an insulator, situated between the electrodes.

REFERENCES:
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patent: RE36747 (2000-06-01), Manabe et al.
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patent: 6180960 (2001-01-01), Kusuda et al.
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patent: 6281524 (2001-08-01), Yamamoto et al.
patent: 6287947 (2001-09-01), Ludowise et al.
patent: 20020074553 (2002-06-01), Starikov et al.
patent: 20030010994 (2003-01-01), Chen et al.

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