Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2008-07-22
2008-07-22
Le, Thao X. (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S623000
Reexamination Certificate
active
07402837
ABSTRACT:
Methods of fabricating light emitting diodes and light emitting devices are provided that include a substrate, an n-type epitaxial region on the substrate and a p-type epitaxial region on the n-type epitaxial region. At least a portion of the p-type epitaxial region comprises a mesa with respect to the substrate. An ohmic contact is provided on an exposed portion of the p-type epitaxial layer. The ohmic contact is self aligned to a sidewall of the mesa and to the p-type epitaxial layer such that a sidewall of the ohmic contact is substantially aligned with a sidewall of the mesa and to the p-type epitaxial layer.
REFERENCES:
patent: 4064620 (1977-12-01), Lee et al.
patent: 4680085 (1987-07-01), Vijan et al.
patent: 4966862 (1990-10-01), Edmond
patent: 4990972 (1991-02-01), Satoh et al.
patent: 5286997 (1994-02-01), Hill
patent: 5633192 (1997-05-01), Moustakas et al.
patent: 5939735 (1999-08-01), Tsutsui et al.
patent: 6204084 (2001-03-01), Sugiura et al.
patent: 6204512 (2001-03-01), Nakamura et al.
patent: 6404125 (2002-06-01), Garbuzov et al.
patent: 6547249 (2003-04-01), Collins et al.
patent: 6610995 (2003-08-01), Nakamura et al.
patent: 6740906 (2004-05-01), Slater et al.
patent: 6894317 (2005-05-01), Nakajo
patent: 6900475 (2005-05-01), Yokouchi et al.
patent: 0 383 237 (1990-08-01), None
patent: WO 02/061847 (2002-08-01), None
International Search Report and the Written Opinion of the International Searching Authority for application No. PCT/US2004/03828 mailed on Apr. 29, 2005.
Edmond John
Hamilton Ian
Slater, Jr. David Beardsley
Arora Ajay K
Cree Inc.
Le Thao X.
Myers Bigel & Sibley Sajovec, PA
LandOfFree
Light emitting devices with self aligned ohmic contacts does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Light emitting devices with self aligned ohmic contacts, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting devices with self aligned ohmic contacts will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2783394