Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant material
Reexamination Certificate
2006-09-19
2008-11-04
Pizarro, Marcos D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular dopant material
C257SE33010, C313S502000
Reexamination Certificate
active
07446348
ABSTRACT:
A light emitting device includes an active layer including atoms A of a matrix semiconductor having a tetrahedral structure, a heteroatom D substituted for the atom A in a lattice site, and a heteroatom Z inserted into an interstitial site positioned closest to the heteroatom D, the heteroatom D having a valence electron number differing by +1 or −1 from that of the atom A, and the heteroatom Z having an electron configuration of a closed shell structure through charge compensation with the heteroatom D, and an n-electrode and a p-electrode adapted to supply a current to the active layer.
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Haneda Shigeru
Shimizu Tatsuo
Yamamoto Kazushige
Kabushiki Kaisha Toshiba
Montalvo Eva
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Pizarro Marcos D.
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