Light emitting device with a micro-reflection structure carrier

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

Reexamination Certificate

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Details

C257S011000, C257S012000, C257S013000, C257S014000, C257S051000, C257S082000, C257S085000, C257S090000, C257S094000, C257S095000, C257S098000, C257S102000, C257S183000, C257S200000

Reexamination Certificate

active

07154121

ABSTRACT:
A light emitting device includes a micro-reflection structure carrier, which is formed by performing etching process on a carrier, a reflection layer, a light emitting layer, and a transparent adhesive layer, wherein the reflection layer is formed over the micro-reflection structure carrier and adheres to the light emitting layer through the transparent adhesive layer.

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