Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2006-12-26
2006-12-26
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S011000, C257S012000, C257S013000, C257S014000, C257S051000, C257S082000, C257S085000, C257S090000, C257S094000, C257S095000, C257S098000, C257S102000, C257S183000, C257S200000
Reexamination Certificate
active
07154121
ABSTRACT:
A light emitting device includes a micro-reflection structure carrier, which is formed by performing etching process on a carrier, a reflection layer, a light emitting layer, and a transparent adhesive layer, wherein the reflection layer is formed over the micro-reflection structure carrier and adheres to the light emitting layer through the transparent adhesive layer.
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Hsieh Min-Hsun
Liu Wen-Huang
Epistar Corporation
Hsu Winston
Jr. Carl Whitehead
Mitchell James
LandOfFree
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