Light emitting device, wafer for light emitting device, and meth

Details Light emitting device, wafer for light emitting device, and meth Light emitting device, wafer for light emitting device, and meth

1998-04-07

1999-10-05

Mulpuri, Savitri

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

257 96, H01L 3300

Patent

active

059628758

ABSTRACT:
A light emitting device having higher blue luminance is obtained. A gallium nitride compound layer is formed on a GaAs substrate, and thereafter the GaAs substrate is at least partially removed for forming the light emitting device. Due to the removal of the GaAs substrate, the quantity of light absorption is reduced as compared with the case of leaving the overall GaAs substrate. Thus, a light emitting device having high blue luminance is obtained.

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