Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Substrate dicing
Reexamination Certificate
2005-11-01
2005-11-01
Thomas, Tom (Department: 2815)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Substrate dicing
C438S029000
Reexamination Certificate
active
06960485
ABSTRACT:
A process of forming separation grooves for separating a semiconductor wafer into individual light-emitting devices, a process for thinning the substrate, process for adhering the wafer to the adhesive sheet to expose a substrate surface on the reverse or backside of the wafer, a scribing process for forming split lines in the substrate for dividing the wafer into light-emitting devices, and a process of forming a mirror structure comprising a light transmission layer, a reflective layer, and a corrosion-resistant layer, which are laminated in sequence using sputtering or deposition processes. Because the light transmission layer is laminated on the adhesive sheet, gases normally volatilized from the adhesion materials are sealed and do not chemically combine with the metal being deposited as the reflective layer. As a result, reflectivity of the reflective layer can be maintained.
REFERENCES:
patent: 5798537 (1998-08-01), Nitta
patent: 6033927 (2000-03-01), Shibata et al.
patent: 6100545 (2000-08-01), Chiyo et al.
patent: 6121636 (2000-09-01), Morita et al.
patent: 6222207 (2001-04-01), Carter-Coman et al.
patent: 6229160 (2001-05-01), Krames et al.
patent: 6291839 (2001-09-01), Lester
patent: 6468902 (2002-10-01), Kawai
patent: 2333899 (1999-08-01), None
patent: 51-137393 (1976-11-01), None
patent: 5-129658 (1993-05-01), None
patent: 09-219560 (1997-08-01), None
patent: 10-270754 (1998-10-01), None
patent: 10308532 (1998-11-01), None
patent: 11-126924 (1999-05-01), None
patent: 11-126925 (1999-05-01), None
patent: 11-186598 (1999-07-01), None
patent: 11-220168 (1999-08-01), None
patent: 11-261112 (1999-09-01), None
patent: 11-126923 (1999-11-01), None
Japanese Office Action dated Mar. 29, 2005, with partial English translation.
Hashimura Masaki
Hirano Atsuo
Hosokawa Hideki
Kachi Tetsu
Nagasaka Naohisa
McGinn & Gibb PLLC
Richards N. Drew
Thomas Tom
Toyoda Gosei Co,., Ltd.
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