Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2008-09-02
2008-09-02
Sefer, A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S079000, C257S088000, C257S098000, C257SE21007, C257SE21019
Reexamination Certificate
active
11433084
ABSTRACT:
A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision.
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Hamatani Toshiji
Takayama Toru
Yamazaki Shunpei
Cook Alex McFarron Manzo Cummings & Mehler, Ltd.
Sefer A.
Semiconductor Energy Laboratory Co,. Ltd.
Wilson Scott R.
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