Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2011-07-19
2011-07-19
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S059000, C257S072000, C257S086000, C257SE21019
Reexamination Certificate
active
07982206
ABSTRACT:
A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision.
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Office Action re Korean application No. KR 2007-0136108, dated Feb. 16, 2009 (with English translation, pp. 1-7).
Hamatani Toshiji
Takayama Toru
Yamazaki Shunpei
Husch & Blackwell LLP
Pert Evan
Semiconductor Energy Laboratory Co,. Ltd.
Wilson Scott
LandOfFree
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