Light emitting device having stepped non-nucleation layer

Details Light emitting device having stepped non-nucleation layer Light emitting device having stepped non-nucleation layer

1992-04-10

1993-10-05

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

257 91, 257 99, 257773, 437905, H01L 3300

Patent

active

052508196

ABSTRACT:
A light emitting device includes a non-nucleation layer on which a step is formed to define a non-nucleation surface. Compound semiconductor islands, each consisting of n-type and p type semiconductor regions, are formed along a wall surface constituting the boundary of the step, and outer and inner electrodes are formed thereon, with the wiring section for the outer electrodes being formed on the surface of the non-nucleation layer which is at a level higher than the non-nucleation surface. The electrodes and the electrode wiring section are positioned substantially at the same level, thus attaining a reduction in resistance value and an increase in strength.

REFERENCES:
patent: 4074299 (1978-02-01), Kusano et al.
patent: 4768070 (1988-08-01), Takizawa et al.
patent: 4924276 (1990-05-01), Heime et al.
Japan Pat. Abstract, vol. 9, No. 19 (E-292) published Jan. 25, 1985.

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