Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2008-06-13
2010-11-23
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257SE51019
Reexamination Certificate
active
07838874
ABSTRACT:
The present invention provides a light-emitting element and a light-emitting device which have high contrast, and specifically, provides a light-emitting device whose contrast is enhanced, not by using a polarizing plate but using a conventional electrode material. Reflection of external light is suppressed by provision of a light-absorbing layer included between a non-light-transmitting electrode and a light-emitting layer. As the light-absorbing layer, a layer is used, which is obtained by adding a halogen atom into a layer including an organic compound and a metal oxide. Further, the light-absorbing layer is formed also over a region in which a thin film transistor for driving a light-emitting element is formed, a region in which a wiring is formed, and the like, and thus light is extracted from the side opposite to the region in which the TFT is formed, thereby reducing reflection of external light.
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Ibe Takahiro
Ikeda Hisao
Kato Kaoru
Koezuka Junichi
Dickey Thomas L
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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