Light emitting device and method of manufacturing the same

Details Light emitting device and method of manufacturing the same Light emitting device and method of manufacturing the same

2007-02-22

2010-06-08

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257SE33005

Reexamination Certificate

active

07732822

ABSTRACT:
A light emitting device having improved light extraction efficiency is disclosed. The light emitting device includes a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one groove formed through a portion of the first semiconductor layer, the active layer, and the second semiconductor layer.

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