Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-03-30
2010-11-30
Andújar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S431000, C257S443000, C257S059000
Reexamination Certificate
active
07843029
ABSTRACT:
A semiconductor range-finding element and a solid-state imaging device, which can provide a smaller dark current and a removal of reset noise. With n-type buried charge-generation region, buried charge-transfer regions, buried charge read-out regions buried in a surface of p-type semiconductor layer, an insulating film covering these regions, transfer gate electrodes arranged on the insulating film for transferring the signal charges to the buried charge-transfer regions, read-out gate electrodes arranged on the insulating film for transferring the signal charges to the buried charge read-out regions, after receiving a light pulse by the buried charge-generation region, in the semiconductor layer just under the buried charge-generation region, an optical signal is converted into signal charges, and a distance from a target sample is determined by a distribution ratio of the signal charges accumulated in the buried charge-transfer regions.
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Kawahito Shoji
Watanabe Takashi
Andújar Leonardo
Klein Jordan
National University Corporation Shizuoka University
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Sharp Kabushiki Kaisha
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