Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2007-03-07
2009-06-02
Mandala, Victor A (Department: 2826)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S660000, C257S098000, C257S102000, C257SE21166, C257SE33064
Reexamination Certificate
active
07541207
ABSTRACT:
A light emitting device and a method of manufacturing the same are provided. A light emitting device has a structure wherein a substrate, an n-type clad layer, a light emitting layer, a p-type clad layer, an ohmic contact layer, and a reflective layer are successively stacked. The ohmic contact layer is formed by adding an additional element to an indium oxide. According to the light emitting device and the method of manufacturing the same, the characteristics of ohmic contact with a p-type clad layer is improved, thus increasing the efficiency and yield of wire bonding during packaging FCLEDS. Also, it is possible to increase the light emitting efficiency and life span of light emitting devices due to the low contactless resistance and the excellent electric current and voltage characteristic.
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Leem Dong-seok
Seong Tae-yeon
Song June-o
Buchanan & Ingersoll & Rooney PC
Gwangju Institute of Science and Technology
Mandala Victor A
Samsung Electronics Co,. Ltd.
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