Light emitting device and method of manufacturing the same

Details Light emitting device and method of manufacturing the same Light emitting device and method of manufacturing the same

2007-08-07

2009-02-03

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S026000, C438S115000, C257SE33063

Reexamination Certificate

active

07485478

ABSTRACT:
A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and a method of manufacturing the light emitting device is provided. After a bank is formed, an exposed anode surface is wiped using a PVA (polyvinyl alcohol)-based porous substance or the like to level the surface and remove dusts from the surface. An insulating film is formed between an interlayer insulating film on a TFT and the anode. Alternatively, plasma treatment is performed on the surface of the interlayer insulating film on the TFT for surface modification.

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