Light emitting device and method of fabricating the same

Details Light emitting device and method of fabricating the same Light emitting device and method of fabricating the same

2007-11-13

2007-11-13

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Having diverse electrical device

C438S022000, C438S046000, C438S149000

Reexamination Certificate

active

10172749

ABSTRACT:
It is characteristic of an organic material suited to an interlayer insulating film to transmit vapor therethrough and to be liable to absorb moisture, and the material has a disadvantage that it is extremely susceptible to oxygen and moisture to be readily deteriorated no matter whether it is low-molecular or high-molecular. Further, alkali metal or alkaline earth metal is used for a positive electrode or a negative electrode of a light emitting element, and these are liable to be oxidized by oxygen. Thus moisture is responsible for deterioration of a light emitting element and for failure such as dark spots or the like. A light emitting device is provided to comprise an interlayer insulating film comprising a high molecular chemical compound and formed on a TFT formed on an insulating surface, a light emitting element, which is provided on the interlayer insulating film, and in which a light emitting layer comprising an organic chemical compound is formed between a pair of electrodes, and an inorganic insulating film containing silicon and nitrogen as its main components or a carbon film possessing a SP3coupling and containing hydrogen formed between the interlayer insulating film and the light emitting element.

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