Light-emitting device and method of fabricating the same

Details Light-emitting device and method of fabricating the same Light-emitting device and method of fabricating the same

2006-05-09

2006-05-09

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S455000, C438S458000

Reexamination Certificate

active

07041529

ABSTRACT:
In a light-emitting device, a light-emitting layer portion composed of a compound semiconductor is bonded on one main surface of a transparent conductive semiconductor substrate while placing a substrate-bonding conductive oxide layer composed of a conductive oxide in between. Between the light-emitting layer portion and the substrate-bonding conductive oxide layer, a contact layer for reducing junction resistance with the substrate-bonding conductive oxide layer so as to contact with the substrate-bonding conductive oxide layer. This is successful in providing the light-emitting device which is producible at low costs, has a low series resistance, and can attain a sufficient emission efficiency despite it has a thick current-spreading layer.

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patent: 6426512 (2002-07-01), Ito et al.
patent: 6465809 (2002-10-01), Furukawa et al.
patent: 7-66455 (1995-03-01), None
patent: 2001-68731 (2001-03-01), None
patent: 2001-339100 (2001-12-01), None

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