Light-emitting device and method for manufacturing the same

Details Light-emitting device and method for manufacturing the same Light-emitting device and method for manufacturing the same

2004-11-05

2009-10-06

Parker, Kenneth A (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C257S059000, C257S072000

Reexamination Certificate

active

07598129

ABSTRACT:
Especially in case that a light-emitting element composed of layers containing organic compounds or inorganic compounds is driven by a thin film transistor (TFT), a structure having at least two transistors installed with a drive TFT is required to prevent irregularities of ON current of a switching TFT provided to a pixel region. Hence, the simplification of a semiconductor element structure and a process for manufacturing a semiconductor element becomes an urgent task as a large substrate is frequently used. According to the present invention, after that a source region and a drain region are formed, an insulating film serving as a channel protective film is formed to cover a portion for serving as a channel region, then, an island-like semiconductor film is formed. Accordingly, a semiconductor element can be manufactured by using only a metallic mask without forming a resist mask, and so the process can be simplified.

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International Search Report of Application No. PCT/JP2004/016809; PCT7498) Dated Mar. 1, 2005.
Written Opinion (Application No. PCT/JP2004/016809; PCT7498) Dated Mar. 1, 2005.

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