Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Active layer of indirect band gap semiconductor
Reexamination Certificate
2011-01-04
2011-01-04
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Active layer of indirect band gap semiconductor
C257S013000, C257S040000, C257S079000, C257S431000, C345S082000
Reexamination Certificate
active
07863628
ABSTRACT:
Disclosed is a light-emitting device using a transistor structure, including a substrate, a first gate electrode, a first insulating layer, a source electrode, a drain electrode, and a light-emitting layer formed between the source electrode and the drain electrode in a direction parallel to these electrodes. In the light-emitting device using the transistor structure, it is possible to adjust the mobility of electrons or holes and to selectively set a light-emitting region through the control of the magnitude of voltage applied to the gate electrode, thus increasing the lifespan of the light-emitting device, facilitating the manufacturing process thereof, and realizing light-emitting or light-receiving properties having high efficiency and high purity.
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Cho Kyung Sang
Choi Byoung Lyong
Lee Eun Kyung
Seo O Gweon
Cantor & Colburn LLP
Richards N Drew
Samsung Electronics Co,. Ltd.
Sun Yu-Hsi
LandOfFree
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