Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-04-08
2008-04-08
Rose, Kiesha L. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S079000
Reexamination Certificate
active
07355251
ABSTRACT:
An object is to provide a light emitting device capable of efficiently dissipating heat generated in a semiconductor light-emitting element. The light emitting device1for achieving this object is a device wherein a multilayer chip varistor10has a varistor element11having a varistor layer comprised essentially of ZnO, and a plurality of internal electrodes101, 102arranged to sandwich the varistor layer between the internal electrodes; and a plurality of external electrodes103, 104formed on an outer surface of the varistor element11and each connected to a corresponding internal electrode101, 102; wherein a semiconductor light-emitting element20has an electroconductive substrate202of ZnO, and semiconductor layers201, 203, 205of ZnO formed by epitaxial growth on two surfaces of the electroconductive substrate202; wherein the semiconductor light-emitting element20is placed on a principal surface11aintersecting with the internal electrodes101, 102of the multilayer chip varistor10; wherein the semiconductor layer205is fixed in face contact to the principal surface11a.
REFERENCES:
patent: 2005/0184387 (2005-08-01), Collins et al.
patent: 2006/0056123 (2006-03-01), Aoyagi et al.
patent: A-09-246017 (1997-09-01), None
patent: A 2001-015815 (2001-01-01), None
Kanazawa Jitsuo
Saito Yo
Oliff & Berridg,e PLC
Rose Kiesha L.
TDK Corporation
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