Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2009-07-30
2011-10-25
Dang, Phuc (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S081000, C257S082000, C349S073000, C349S114000
Reexamination Certificate
active
08044411
ABSTRACT:
The present invention provides a structure in which a pixel region13is surrounded by a first sealing material (having higher viscosity than a second sealing material)16including a spacer (filler, minute particles and/or the like) which maintains a gap between the two substrates, filled with a few drops of the transparent second sealing material17awhich is spread in the region; and sealed by using the first sealing material16and the second sealing material17.
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European Search Report (Application No. 03028484.8) dated Jun. 23, 2010.
Taiwanese Office Action (Application No. 92135259) Dated Mar. 17, 2011.
Maruyama Junya
Ohno Yumiko
Takayama Toru
Dang Phuc
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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