Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2004-12-21
2009-02-24
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S291000, C257S449000, C349S136000, C349S137000
Reexamination Certificate
active
07495257
ABSTRACT:
An object of the present invention is to provide a light emitting device in which variations in an emission spectrum depending on a viewing angle with respect to a side from which luminescence is extracted are decreased. A light emitting device according to the invention has a transistor, an insulating layer covering the transistor and a light emitting element provided in an opening of the insulating layer. The transistor and the light emitting element are electronically connected through a connecting portion. Additionally, the connecting portion is connected to the transistor through a contact hole penetrating the insulating layer. Note that the insulating layer may be a single layer or a multilayer in which a plurality of layers including different substances is laminated.
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Office Action received in Chinese Patent Application No. 200410094253.6 dated May 30, 2008 with English translation.
Kawakami Takahiro
Nishi Takeshi
Tsuchiya Kaoru
Costellia Jeffrey L.
Diaz José R
Jackson, Jr. Jerome
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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