Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2007-12-11
2007-12-11
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S072000, C257S059000
Reexamination Certificate
active
11045873
ABSTRACT:
An objective is to increase the reliability of a light emitting device structured by combining TFTs and organic light emitting elements. A TFT (1201) and an organic light emitting element (1202) are formed on the same substrate (1203) as structuring elements of a light emitting device (1200). A first insulating film (1205) which functions as a blocking layer is formed on the substrate (1203) side of the TFT (1201), and a second insulating film (1206) is formed on the opposite upper layer side as a protective film. In addition, a third insulating film (1207) which functions as a barrier film is formed on the lower layer side of the organic light emitting element (1202). The third insulating film (1207) is formed by an inorganic insulating film such as a silicon nitride film, a silicon oxynitride film, an aluminum nitride film, an aluminum oxide film, or an aluminum oxynitride film. A fourth insulating film (1208) and a partitioning layer (1209) formed on the upper layer side of the organic light emitting element (1202) are formed using similar inorganic insulating films.
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Takayama Toru
Yamazaki Shunpei
Cook Alex McFarron Manzo Cummings & Mehler, Ltd.
Pert Evan
Semiconductor Energy Laboratory Co,. Ltd.
Tran Tan
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