Light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

Reexamination Certificate

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Details

C257S013000

Reexamination Certificate

active

11368408

ABSTRACT:
A light emitting device includes an active layer, having a multiple quantum well structure, sandwiched between an n-type semiconductor layer and a p-type semiconductor layer. The active layer includes first and second well layers made of a nitride compound semiconductor containing In, where the second well layer emits light having a main peak wavelength which is longer than that of the first well layer. The active layer also includes an intervening barrier layer disposed between the first and second well layers, and first and second barrier layers. The first well layer isg sandwiched between the first barrier layer and the intervening barrier layer, and the second well layer is sandwiched between the second barrier layer and the intervening barrier layer. A thickness of said first barrier layer is different than a thickness of said second barrier layer.

REFERENCES:
patent: 5684309 (1997-11-01), McIntosh et al.
patent: 6163038 (2000-12-01), Chen et al.
patent: 09-232627 (1997-09-01), None
patent: 10-012969 (1998-01-01), None
patent: 10-022525 (1998-01-01), None
patent: 10-084132 (1998-03-01), None
patent: 10-215029 (1998-08-01), None
Shuji Nakamura et al., “High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures”, Jpn. J. Appl. Phys. vol. 34 (1995) pp. L797-L799.

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