Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2006-11-21
2006-11-21
Kebede, Brook (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S098000, C257SE33001, C257SE31099
Reexamination Certificate
active
07138660
ABSTRACT:
The light emitting device has a light emitting diode which is made of a nitride semiconductor and a phosphor which absorbs a part of lights emitted from the light emitting diode and emits different lights with wavelengths other than those of the absorbed lights. The phosphor is made of alkaline earth metal silicate fluorescent material activated with europium.
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Japanese Office Action dated Aug. 1, 2006 (with partial English translation).
Hirano Atsuo
Kempfert Wolfgang
Ota Akihito
Ota Koichi
Pachler Peter
Kebede Brook
Leuchstoffwerk Breitungen GmbH
Litec GBR
McGinn IP Law Group PLLC
Toyoda Gosei Co,., Ltd.
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