Light emitting device

Details Light emitting device Light emitting device

2006-05-09

2006-05-09

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S013000

Reexamination Certificate

active

07042017

ABSTRACT:
A light emitting device includes an active layer, having a multiple quantum well structure, sandwiched between an n-type semiconductor layer and a p-type semiconductor layer. The active layer includes first and second well layers made of a nitride compound semiconductor containing In, where the second well layer emits light having a main peak wavelength which is longer than that of the first well layer, and where the growth number of the first well layer is more than the growth number of the second well layer.

REFERENCES:
patent: 5684309 (1997-11-01), McIntosh et al.
patent: 09-232627 (1997-09-01), None
patent: 10-012969 (1998-01-01), None
patent: A 10-022525 (1998-01-01), None
patent: 10-084132 (1998-03-01), None
patent: 10-215029 (1998-08-01), None
Shuji Nakamura et al., “High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures”; Jpn. J. Appl. Phys. vol. 34 (1995) pp.L797-L799, Part 2, No. 7A, Jul. 1, 1995.

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