Light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant material

Reexamination Certificate

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Details

C257S103000

Reexamination Certificate

active

06891203

ABSTRACT:
According to the invention, a Group III nitride compound semiconductor light-emitting element is provided with a light-emitting layer comprising two layers of different in ratio of AlGaInN composition, and emitting light with an emission peak wavelength in an ultraviolet region and light with an emission peak wavelength in a visible region. The light-emitting element and a fluorescent material excited by light in the ultraviolet region are combined to configure a light emitting device.

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patent: 2000-196142 (2000-07-01), None
patent: 2000-216434 (2000-08-01), None
patent: 2000-349340 (2000-12-01), None

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