Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant material
Reexamination Certificate
2005-05-10
2005-05-10
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular dopant material
C257S103000
Reexamination Certificate
active
06891203
ABSTRACT:
According to the invention, a Group III nitride compound semiconductor light-emitting element is provided with a light-emitting layer comprising two layers of different in ratio of AlGaInN composition, and emitting light with an emission peak wavelength in an ultraviolet region and light with an emission peak wavelength in a visible region. The light-emitting element and a fluorescent material excited by light in the ultraviolet region are combined to configure a light emitting device.
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Kozawa Takahiro
Shibata Naoki
McGinn & Gibb PLLC
Toyoda Gosei Co,., Ltd.
Wilson Allan R.
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