Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-09-26
2006-09-26
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S079000, C257S428000, C257SE33001, C438S022000, C438S057000, C438S048000, C438S054000, C438S069000
Reexamination Certificate
active
07112862
ABSTRACT:
A light emitting and detecting device and a method of manufacturing the same are provided. The method includes forming an insulating layer on a substrate doped with an n-type dopant or a p-type dopant, and removing a portion of the insulating layer to expose a predetermined area of the substrate; forming a doping layer doped with an opposite dopant to the dopant of the substrate by applying a dopant on the exposed area of the substrate and heat treating the substrate to create a light conversion effect in a p-n junction between the substrate and the doping layer; and forming first and second electrodes on the substrate to electrically connect the doping layer. Thus, it is possible to control the diffusion depth of the doping layer with opposite dopant to the substrate in the substrate.
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Korean Office Action dated Aug. 30, 2005.
Choi Byoung-lyong
Kim Jun-young
Lee Eun-kyung
Buchanan & Ingersoll & Rooney PC
Flynn Nathan J.
Samsung Electronics Co,. Ltd.
Wilson Scott R.
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