Light emitting and lasing semiconductor devices and methods

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C372S045010

Reexamination Certificate

active

07953133

ABSTRACT:
A two terminal semiconductor device for producing light emission in response to electrical signals, includes: a terminal-less semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region having a tunnel junction adjacent the base region; the base region having a region therein exhibiting quantum size effects; an emitter terminal and a collector terminal respectively coupled with the emitter region and the collector region; whereby application of the electrical signals with respect to the emitter and collector terminals, causes light emission from the base region. Application of the electrical signals is operative to reverse bias the tunnel junction. Holes generated at the tunnel junction recombine in the base region with electrons flowing into the base region, resulting in the light emission. The region exhibiting quantum size effects is operative to aid recombination.

REFERENCES:
patent: 5550854 (1996-08-01), Chen et al.
patent: 5892784 (1999-04-01), Tan et al.
patent: 6526082 (2003-02-01), Corzine et al.
patent: 7091082 (2006-08-01), Feng et al.
patent: 7244997 (2007-07-01), Appelbaum et al.
patent: 7286583 (2007-10-01), Feng et al.
patent: 7354780 (2008-04-01), Feng et al.
patent: 7535034 (2009-05-01), Walter et al.
patent: 2001/0050934 (2001-12-01), Choquette et al.
patent: 2002/0037022 (2002-03-01), Fukagai
patent: 2002/0131464 (2002-09-01), Sirbu et al.
patent: 2005/0040432 (2005-02-01), Feng et al.
patent: 2005/0054172 (2005-03-01), Feng et al.
patent: 2008/0240173 (2008-10-01), Holonyak et al.
patent: 09-074246 (1997-03-01), None
patent: WO97/20353 (1997-06-01), None
patent: WO99/05726 (1999-02-01), None
patent: WO2005/020287 (2005-03-01), None
patent: WO2006/093883 (2006-09-01), None
Rediker, R.H.; Sawyer, D.E., “Very Narrow Base Diode,” Proceedings of the IRE , vol. 45, No. 7, pp. 944-953, Jul. 1957.
Light-Emitting Transistor: Light Emission From InGaP/GaAs Heterojunction Bipolar Transistors, M. Feng, N. Holonyak, Jr., and W. Hafez, Appl. Phys. Lett. 84, 151 (2004).
Quantum-Well-Base Heterojunction Bipolar Light-Emitting Transistor, M. Feng, N. Holonyak, Jr., and R. Chan, Appl. Phys. Lett. 84, 1952 (2004).
Type-II GaAsSb/InP Heterojunction Bipolar Light-Emitting Transistor, M. Feng, N. Holonyak, Jr., B. Chu-Kung, G. Walter, and R. Chan, Appl. Phys. Lett. 84, 4792 (2004).
Laser Operation of a Heterojunction Bipolar Light-Emitting Transistor, G. Walter, N. Holonyak, Jr., M. Feng, and R. Chan, Appl. Phys. Lett. 85, 4768 (2004).
Microwave Operation and Modulation of a Transistor Laser, R. Chan, M. Feng, N. Holonyak, Jr., and G. Walter, Appl. Phys. Lett. 86, 131114 (2005).
Room Temperature Continuous Wave Operation of a Heterojunction Bipolar Transistor Laser, M. Feng, N. Holonyak, Jr., G. Walter, and R. Chan, Appl. Phys. Lett. 87, 131103 (2005).
Visible Spectrum Light-Emitting Transistors, F. Dixon, R. Chan, G. Walter, N. Holonyak, Jr., M. Feng, X. B. Zhang, J. H. Ryou, and R. D. Dupuis, Appl. Phys. Lett. 88, 012108 (2006).
The Transistor Laser, N. Holonyak, M Feng, Spectrum, IEEE vol. 43, Issue 2, Feb. 2006.
Signal Mixing in a Multiple Input Transistor Laser Near Threshold, M. Feng, N. Holonyak, Jr., R. Chan, A. James, and G. Walter, Appl. Phys. Lett. 88, 063509 (2006).
Collector Current Map of Gain and Stimulated Recombination on the Base Quantum Well Transitions of a Transistor Laser, R. Chan , N. Holonyak, Jr. , A. James ,and G. Walter; Appl. Phys. Lett 88, 143508 (2006).
Collector Breakdown in the Heterojunction Bipolar Transistor Laser, G. Walter, A. James, N. Holonyak, Jr., M. Feng, and R. Chan Appl. Phys. Lett. 88, 232105 (2006).
High-speed (/spl ges/1 GHz) Electrical and Optical Adding, Mixing, and Processing of Square-Wave Signals With a Transistor Laser, Milton Feng; N. Holonyak, Jr.; R. Chan; A. James; and G. Walter; Photonics Technology Letters, IEEE vol. 18 Issue: 11; Jun. 2006 pp. 1240-1242.
Graded-Base InGaN/GaN Heterojunction Bipolar Light-Emitting Transistors, B. F. Chu-Kung et al., Appl. Phys. Lett. 89, 082108 (2006).
Carrier LifeTime and Modulation Bandwidth of a Quantum Well AlGaAs/InGaP/GaAs/InGaAs Transistor Laser, M. Feng, N. Holonyak, Jr., A. James, K. Cimino, G. Walter, and R. Chan; Appl. Phys. Lett. 89, 113504 (2006).
Chirp in a Transitor Laser: Franz-Keldysh Reduction of the Linewidth Enhancement, G. Walter, A. James, N. Holonyak, Jr., and M. Feng; Appl. Phys. Lett. 90, 091109 (207).
Photon-Assisted Breadkdown, Negative Resistance, and Switching in a Quantum-Well Transistor Laser; A. James, G. Walter, M. Feng, and N. Holonyak, Jr., Appl. Phys. Lett. 90, 152109 (2007).
Franz-Keldysh Photon-Assisted Voltage-Operated Switching of a Transistor Laser; James,A,; Holonyak, N.: Feng, M.; Walter, G., Photonics Technology Letters, IEEE vol. 19 issue;9 May 1, 2007, pp. 680-682.
Experimental Determination of the Effective Minority Carrier Lifetime in the Operation of a Quantum-Well n-p-n Heterojunction Biopolar Light-Emigging Transistor of Varying Base Quantum-Well Design and doping; H.W. Then, M. Feng, N. Holonyak, Jr., and C.H.Wu, Appl. Phys. Lett. 91, 033505 (2007).
Charge Control Analysis of Transistor Laser Operation; M. Feng, N. Holonyak, Jr., H.W. Then, and G. Walter; Appl. Phys. 91, 053501 (2007).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Light emitting and lasing semiconductor devices and methods does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light emitting and lasing semiconductor devices and methods, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting and lasing semiconductor devices and methods will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2636496

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.