Patent
1983-10-31
1986-09-23
Clawson, Jr., Joseph E.
357 30, 357 35, 357 86, H01L 29747
Patent
active
046138846
ABSTRACT:
The invention relates to a controllable semiconductor circuit element consisting of a vertical thyristor comprised of four zones of alternating conductivity types and arranged in a semiconductor disk, with the two load current connections located on the top surface and on the bottom surface of the semiconductor disk respectively. According to the invention, the semiconductor disk comprises an additional controllable circuit element with a lateral zone structure on the top surface of the semiconductor disk. Zones of this additional circuit element are linked with zones of the vertical thyristor in such a way as to enable the vertical thyristor to be indirectly ignited by ignition of the lateral circuit element.
REFERENCES:
patent: 3508127 (1970-04-01), Bergman et al.
patent: 3524114 (1970-08-01), Hutson
patent: 3586928 (1971-06-01), Bergman et al.
patent: 3699406 (1972-10-01), Mapother et al.
patent: 3832732 (1974-08-01), Roberts
patent: 4087834 (1978-05-01), Temple
patent: 4224634 (1980-09-01), Suedberg
D. L. Bergeron, "Isolated High Voltage PNPN Diode and SCR Cells", IBM Technical Disclosure Bulletin, vol. 24, No. 9 (Feb. 1982), pp. 4658-4659.
"The Amplifying Gate Thyristor," International Electron Devices Meeting, p. 110 (IEEE, 1968).
Angerstein Jorg
Silber Dieter
Clawson Jr. Joseph E.
Licentia Patent-Verwaltungs GmbH
Telefunken electronic GmbH
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