Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-12-15
2010-12-14
Purvis, Sue (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S432000, C257SE31127
Reexamination Certificate
active
07851837
ABSTRACT:
A solid-state imaging apparatus includes unit pixels arranged in a two-dimensional array. Each unit pixel includes a light-collector and light-receiver. The light-collector includes light-transmitting films that form a refractive index distribution and multiple zones, each of which has a width equal to or shorter than a wavelength of incident light. For each central unit pixel, a center axis of the light-receiver matches a central axis of the light-collector. For each peripheral unit pixel, a central axis of the light-collector is displaced from the central axis of the light-receiver toward the center of the imaging area. The line width of each light-transmitting film of a central unit pixel is different than the line width of each light-transmitting film of a peripheral unit pixel in a same relative position, and the sum of line widths of the central unit pixel differs from the sum of line widths of the peripheral unit pixel.
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Ahmed Selim
Greenblum & Bernstein P.L.C.
Panasonic Corporation
Purvis Sue
LandOfFree
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