Coating apparatus – Gas or vapor deposition – With treating means
Patent
1995-12-28
1999-05-04
Tsang, Cecilia J.
Coating apparatus
Gas or vapor deposition
With treating means
118715, 118719, 361143, 361144, 361145, 361225, 361230, 361233, 361234, 361235, 156345, 1566431, 307127, 307130, C23C 1600, H02N 1300
Patent
active
059000627
ABSTRACT:
A lift pin 95 for dechucking a substrate 15 held to a chuck 50 by residual electrostatic charge, the substrate being processed in a plasma formed using RF currents, is described. The lift pin 95 comprises (a) a movable elongated member 110 having a tip 115 suitable for lifting and lowering the substrate 15 off the chuck 50, and capable of forming an electrically conductive path between the substrate 15 and a current sink 105. The electrically conductive path comprises at least one of the following: (1) a frequency selective filter capable of filtering RF currents flowing therethrough so that substantially no RF currents flow through the filter; or (2) a resistor having a resistance sufficiently elevated to reduce the voltage caused by RF currents flowing therethrough, by at least about 50%. The lift pin 95 allows the residual electrostatic charge in the substrate 15 to be discharged to the current sink 105 substantially without allowing RF currents, used to form a plasma in the process chamber and to attract the plasma to the substrate, from flowing to the current sink 105.
REFERENCES:
patent: 4891087 (1990-01-01), Davis et al.
patent: 5350479 (1994-09-01), Collins et al.
patent: 5366002 (1994-11-01), Tepman
patent: 5459632 (1995-10-01), Birang et al.
patent: 5552955 (1996-09-01), Mashiro et al.
patent: 5612850 (1997-03-01), Birang et al.
patent: 5684669 (1997-11-01), Collins et al.
European Search Report Communication dated Jun. 2, 1998.
Gristi Raymond
Hanawa Hiroji
Loewenhardt Peter K.
Ye Yan
Yin Gerald Zheyao
Applied Materials Inc.
Janah Ashok
Mohamed Abdel A.
Tsang Cecilia J.
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