Lift-off process

Details Lift-off process Lift-off process

1989-04-26

1991-05-21

Dees, Jose

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Simultaneous developing a resist image and etching a subtrate

430317, 430323, 430324, G03C 500

Patent

active

050174592

ABSTRACT:
A lift-off process for forming patterned films of particular use for films of metals that need to be deposited in a non-directional fashion. The process features a lift-off mask that includes a thin coating of Brewer Science ARC.RTM. PN-2 as an assisting layer under a photoresist layer.

REFERENCES:
patent: 3490943 (1970-01-01), Werdt
patent: 4144101 (1979-03-01), Rideout
patent: 4248948 (1981-02-01), Matsuda
patent: 4253888 (1981-03-01), Kikuchi
patent: 4448800 (1984-05-01), Ehara et al.
patent: 4451328 (1984-05-01), Dubois
patent: 4497684 (1985-02-01), Sebasta
Brewer et al., "The Reduction of the Standing Wave Effect in Positive Photoresist", J. of Appl. Photographie Eng., vol 7(6), Dec. 1981.
Technical Data Handbook for ARC, Brewer Science.
"Lift-Off Techniques for Fine Line Metal Patterning", Semiconductor International, Dec. 1981, pp. 72-88.
IBM Technical Disclosure Bulletin vol. 29, #11, Apr. 1967.

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