Lift-off and subsequent bonding of epitaxial films

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156655, 156662, 156249, 350 9612, H01L 21306, B44C 122, C03C 1500, C03C 2506

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active

048835617

ABSTRACT:
A method for removing an epitaxial film from a single crystal substrate upon which it is grown and adhering the films to second substrate and the resultant structure. The removing method comprises (a) providing a thin release layer (.ltoreq.100 nm) between the film to be grown and the single crystal substrate; (b) growing the epitaxial film; (c) applying a polymeric support layer which is under tension over the film; and (d) selectively etching the release layer, the tension in the support layer causing the edges of the film to curve upwardly as the release layer is etched away. The adhering method uses either adhesives or relies solely on Van der Waals bonding between the epitaxial film and the second substrate.

REFERENCES:
Klem et al., "Characteristics of Lift-Off Fabricated AlGaAs/InGaAs Single-Strained Quantum Well Structures on Glass and Silicon Substrates" Preprint Article, Sandia National Laboratories, Albuquerque, N.M., pp. 1-6.
M. Konagai et al., "High Efficiency GaAs Thin Film Solar Cells by Peeled Film Technology," Journal of Crystal Growth, 45, pp. 277-280 (1978).
K. Y. Lee et al., "Fabrication of Ultrasmall Devices on Thin Active GaAs Membrane," Journal of Vacuum Science Technology B5(1), 322-325, Jan./Feb. (1987).
J. C. C. Fan, "Thin Films of III-V Compounds and Their Applications," Journal de Physique Colloquium, 43, Cl, 327-339 (1982).
D. L. Miller et al., "GaAs Peeled Film Solar Cells," Document #MRDC41056.49 FRD, Final Report Draft for the Period Mar. 15, 1980-Dec. 31, 1981, Prepared for Solar Energy Research Institute Under Subcontract No. X5-0-9002-2.
Yablonovitch et al., "Extreme Selectivity in the Lift-Off of Epitaxial GaAs Films", Applied Physics Letters, 51(26), 2222-2224 (Dec. 28, 1987).

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