Lid structure for microdevice and method of manufacture

Details Lid structure for microdevice and method of manufacture Lid structure for microdevice and method of manufacture

2011-06-28

2011-06-28

Such, Matthew W (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With window means

C257SE21499

Reexamination Certificate

active

07968986

ABSTRACT:
A system and a method are described for forming features at the bottom of a cavity in a substrate. Embodiments of the systems and methods provide an infrared transmitting, hermetic lid for a microdevice. The lid may be manufactured by first forming small, subwavelength features on a surface of an infrared transmitting substrate, and coating the subwavelength features with an etch stop material. A spacer wafer is then bonded to the infrared transmitting substrate, and a device cavity is etched into the spacer wafer down to the etch stop material, exposing the subwavelength features. The etch stop material may then be removed, and the microdevice enclosed in the device cavity, by bonding the device wafer to the lid.

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MTI (MTI corporation, product manual, Thermal oxide wafer, 2002).

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