Level shifter circuit with a thin gate oxide transistor

Electronic digital logic circuitry – Interface – Logic level shifting

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C327S333000

Reexamination Certificate

active

08049532

ABSTRACT:
A level shifting circuit with a thin gate transistor connected to the input of the output stage is presented. The level shifting circuit has an input stage that receives an input that is at first voltage. A transistor with a thin gate oxide has one terminal connected to the input stage and another terminal coupled to an input of the output stage. The output stage of the level shifting circuit is implemented with thick gate oxide transistors.

REFERENCES:
patent: 6342996 (2002-01-01), Drapkin et al.
patent: 7567112 (2009-07-01), Shen
patent: 7777549 (2010-08-01), Harada
patent: 2008/0061832 (2008-03-01), Hu et al.
patent: 2008/0211541 (2008-09-01), Chauhan
patent: 2009/0128215 (2009-05-01), Hsueh
patent: 2009/0231014 (2009-09-01), Harada
patent: 2010/0123505 (2010-05-01), Chou et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Level shifter circuit with a thin gate oxide transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Level shifter circuit with a thin gate oxide transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Level shifter circuit with a thin gate oxide transistor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4309950

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.