Static information storage and retrieval – Systems using particular element – Semiconductive
Patent
1998-07-29
1999-10-19
Fears, Terrell W.
Static information storage and retrieval
Systems using particular element
Semiconductive
36518901, 365226, G11C 1300
Patent
active
059699841
ABSTRACT:
The level converting circuit includes a first current cutting circuit, a second current cutting circuit, a level shift circuit and an inverter. The first current cutting circuit includes two PMOS transistors connected to a node having a boosted potential Vpp. The second current cutting circuit includes two NMOS transistor connected to a ground node. The level shift circuits include two PMOS transistors and two NMOS transistors. Before a through current flows between the node having the boosted potential Vpp and the ground node, any of the transistor included in the first current cutting circuit and any of the transistors included in the second current cutting circuits are turned off. Therefore, through current between the node having the boosted potential Vbb and the ground node can be prevented.
REFERENCES:
patent: 5193073 (1993-03-01), Bhuva
patent: 5612921 (1997-03-01), Chang et al.
"An Efficient Back-Bias Generator with Hybrid Pumping Circuit for 1.5V DRAM's" by Yasuhiko Tsukikawa et al., Mitsubishi Electric Corporation, Itami, Japan.
Asakura Mikio
Hidaka Hideto
Komiya Yuichiro
Ooishi Tsukasa
Fears Terrell W.
Mitsubishi Denki & Kabushiki Kaisha
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