Level conversion circuit for converting voltage amplitude of...

Electronic digital logic circuitry – Interface – Supply voltage level shifting

Reexamination Certificate

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Details

C326S063000, C326S068000, C326S083000, C327S333000

Reexamination Certificate

active

08067961

ABSTRACT:
In a level conversion circuit, two P channel MOS transistors form a current mirror circuit. When an input signal rises from the “L” level to the “H” level, an N channel MOS transistor connected to a drain of one P channel MOS transistor is brought out of conduction to prevent a leak current from flowing through two P channel MOS transistors, which decreases a power consumption. In addition, when the input signal rises from the “L” level to the “H” level, a P channel MOS transistor connected to a drain of the other P channel MOS transistor is brought into conduction to fix a potential of a node of the drain of the other P channel MOS transistor to the “H” level, which prevents the potential of the node from becoming unstable.

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Office Action in CN 200510108951.1 dated Feb. 27, 2009, and an English Translation thereof.
Koo et al., “A New Level Shifter in Ultra Deep Sub-Micron for Low to Wide Range Voltage Applications” IEEE Proc. SOCCC, (Sep. 12-15, 2004), pp. 155-156.
Office Action dated Apr. 28, 2011, issued in the corresponding Taiwanese Patent Application No. 094130286, and an English Translation thereof.

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