LED with series-connected monolithically integrated mesas

Details LED with series-connected monolithically integrated mesas LED with series-connected monolithically integrated mesas

2007-10-23

2007-10-23

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S094000, C257S095000, C257S088000, C257S103000, C257S099000

Reexamination Certificate

active

10817603

ABSTRACT:
A light emitting semiconductor device die (10, 110, 210, 310) includes an electrically insulating substrate (12, 112). First and second spatially separated electrodes (60, 62, 260, 262, 360, 362) are disposed on the electrically insulating substrate. The first and second electrodes define an electrical current flow direction directed from the first electrode to the second electrode. A plurality of light emitting diode mesas (30, 130, 130′, 230, 330) are disposed on the substrate between the first and second spatially separated electrodes. Electrical series interconnections (50, 150, 250, 350) are disposed on the substrate between neighboring light emitting diode mesas. Each series interconnection carries electrical current flow between the neighboring mesas in the electrical current flow direction.

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