LED with porous diffusing reflector

Details LED with porous diffusing reflector LED with porous diffusing reflector

2007-03-27

2009-10-13

Dang, Trung (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257SE33068

Reexamination Certificate

active

07601989

ABSTRACT:
In one embodiment, an AlInGaP LED includes a bottom n-type layer, an active layer, a top p-type layer, and a thick n-type GaP layer over the top p-type layer. The thick n-type GaP layer is then subjected to an electrochemical etch process that causes the n-type GaP layer to become porous and light-diffusing. Electrical contact is made to the p-GaP layer under the porous n-GaP layer by providing metal-filled vias through the porous layer, or electrical contact is made through non-porous regions of the GaP layer between porous regions. The LED chip may be mounted on a submount with the porous n-GaP layer facing the submount surface. The pores and metal layer reflect and diffuse the light, which greatly increases the light output of the LED. Other embodiments of the LED structure are described.

REFERENCES:
patent: 2005/0161696 (2005-07-01), Yuri
patent: 2006/0255358 (2006-11-01), Shum
patent: 2007/0284600 (2007-12-01), Shchekin et al.
patent: 2007/0284607 (2007-12-01), Epler et al.
International Search Report, 17 pages.

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