Coherent light generators – Particular active media – Semiconductor
Patent
1996-04-11
1998-03-24
Lee, John D.
Coherent light generators
Particular active media
Semiconductor
257 94, 257 97, H01S 319
Patent
active
057320985
ABSTRACT:
A semiconductor light emitting device has a double heterostructure. The device is composed of an active layer and clad layers that sandwich the active layer. At least one of the clad layers has a multilayer structure having at least two element layers. The Al mole fraction of an element layer, which is proximal to the active layer, of the multilayer structure is smaller than that of the other element layer thereof distal from the active layer. This arrangement improves the crystal quality of an interface between the active layer and the clad layer of multilayer structure and effectively confines carriers in the active layer.
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Ishikawa Masayuki
Iwamoto Masanobu
Nakamura Takafumi
Nisitani Katsuhiko
Saeki Ryo
Kabushiki Kaisha Toshiba
Kang Ellen E.
Lee John D.
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