Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor
Reexamination Certificate
2006-12-15
2010-06-15
Le, Thao X (Department: 2892)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
C438S108000, C257SE21503
Reexamination Certificate
active
07736945
ABSTRACT:
Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process. The extremely high pressures created during the laser lift-off process do not damage the LED layers due to the large area support of the LED layers by the electrodes and submount.
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International Search Report and Written Opinion, 14 pages.
Basin Grigoriy
Epler John
Holcomb Mari
Martin Paul
Schiaffino Stefano
Koninklijke Philips Electronics , N.V.
Le Thao X
Ogonowsky Brian
Patent Law Group
Philips Lumileds Lighting Company LLC
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